ZVN2106B semelab plc reserves the right to change test conditions, paramet er limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. howeve r semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7927, issue 1 features ? faster switching ? low ciss ? integral source-drain diode ? high input impedance and high gain description this enhancement-mode (normally-off) vertical dmos fet is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. high reliability screening options are available. n ? channel enhancement mode mosfet v dss 60v i d 1.2a r ds(on) 2.0 ? to-39 package (to-205ad) (underside view) pin 1 ? source pin 3 ? drain pin 2 ? gate case ? drain 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) mechanical data dimensions in mm (inches) absolute maximum ratings t case = 25c unless otherwise stated v ds drain - source voltage 60v i d drain current - continuous (t c = 25c) 1.2a - continuous (t a = 25c) 0.45a i dm drain current - pulsed (note 1) 8a v gs gate - source voltage 20v p tot(1) total power dissipation at t mb 25c 5w de-rate linearly above 25c 0.040w/c p tot(2) total power dissipation at t amb 25c 700mw t j ,t stg operating and storage junction temperature range -55 to +150c thermal data r thj-c thermal resistance junction ? case max 20 c/w r thj-amb thermal resistance junction - ambient max 179 c/w notes: 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width 380 s, duty cycle , 2%
ZVN2106B semelab plc reserves the right to change test conditions, paramet er limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. howeve r semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7927, issue 1 static electrical ratings (t case =25c unless otherwise stated) parameter test conditions min. typ. max. unit v (br)dss drain ? source breakdown voltage v gs = 0v i d = 10 a 60 - - v gs(th) gate ? source threshold voltage v ds = v gs i d = 1.0ma 0.8 - 2.4 v i gss gate ? source leakage current v gs = 20v v ds = 0v - - 20 na v ds = 60v v gs = 0v - - 0.5 i dss zero gate voltage drain current v ds = 48v t c = 125c - - 100 a i d(on) on ? state drain current (note 2) v ds = 18v v gs = 10v 2 - - a r ds(on) drain ? source on resistance (note 2) v gs = 10v i d = 1.0a - - 2 ? g fs forward transconductance (note 2) v ds = 18v i d = 1.0a 300 - - ms v sd diode forward voltage (note 2) v gs = 0v i s = 0.45a - 0.8 - v dynamic characteristics c iss input capacitance - - 75 c oss output capacitance - - 45 c rss reverse transfer capacitance v ds = 18v f = 1.0mhz v gs = 0v - - 20 pf t d(on) turn-on delay - - 7 t r rise time - - 8 t d(off) turn-off delay time - - 12 t f fall time v dd = 18v i d = 1a (note 2) - - 15 ns t rr reverse recovery time v gs = 0v, i f = 0.45a, i r = 0.1a - 50 - ns
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